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| BSM 35 GB 120 DN2 IGBT Power Module Preliminary data * Half-bridge * Including fast free-wheeling diodes * Doubled diode area * Package with insulated metal base plate Type BSM 35 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package HALF-BRIDGE 1 Ordering Code C67070-A2111-A70 1200V 50A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 50 35 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 100 70 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 280 W + 150 -55 ... + 150 0.44 0.8 2500 20 11 F 55 / 150 / 56 Vac mm K/W C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Mar-28-1996 BSM 35 GB 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 0.6 2.4 6.5 3.2 3.9 V VGE = VCE, IC = 1.2 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 35 A, Tj = 25 C VGE = 15 V, IC = 35 A, Tj = 125 C Zero gate voltage collector current ICES 1 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 C VCE = 1200 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current IGES 150 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 11 2 0.3 0.14 - S nF - VCE = 20 V, IC = 35 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Mar-28-1996 BSM 35 GB 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 60 120 ns VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39 Rise time tr 60 120 VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39 Turn-off delay time td(off) 400 600 VCC = 600 V, VGE = -15 V, IC = 35 A RGoff = 39 Fall time tf 50 75 VCC = 600 V, VGE = -15 V, IC = 35 A RGoff = 39 Free-Wheel Diode Diode forward voltage VF 2.3 1.9 2.8 - V IF = 35 A, VGE = 0 V, Tj = 25 C IF = 35 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr 0.25 - s IF = 35 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s, Tj = 125 C Reverse recovery charge Qrr C IF = 35 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C Tj = 125 C 2 5 - Semiconductor Group 3 Mar-28-1996 BSM 35 GB 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C 300 W Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 A Ptot 240 220 200 180 160 140 120 100 80 60 40 20 0 0 IC 10 2 tp = 18.0s 100 s 10 1 1 ms 10 0 10 ms DC 10 20 40 60 80 100 120 C 160 -1 10 0 10 1 10 2 10 3 V TC VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 55 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 IGBT K/W IC 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 C 160 ZthJC 10 -1 10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Semiconductor Group 4 Mar-28-1996 BSM 35 GB 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 70 A 60 17V 15V 13V 11V 9V 7V IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 70 A 60 17V 15V 13V 11V 9V 7V IC 55 50 45 40 35 30 25 20 15 10 5 0 0 IC 55 50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 V 5 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 70 A 60 IC 55 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Mar-28-1996 BSM 35 GB 120 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 35 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 C Ciss 10 0 600 V 800 V Coss Crss 10 -1 6 4 2 0 0 10 -2 0 40 80 120 160 nC 220 5 10 15 20 25 30 QGate V 40 VCE Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 0 0 200 400 600 800 1000 1200 V 1600 VCE Semiconductor Group 6 Mar-28-1996 BSM 35 GB 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 39 10 3 t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, IC = 35 A 10 3 tdoff t tdoff ns t ns tdon tr 10 2 tr tdon tf 10 2 tf 10 1 0 10 20 30 40 50 60 A IC 80 10 1 0 20 40 60 80 100 120 140 RG 180 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 39 20 mWs E 16 14 12 10 8 Eoff 6 4 2 0 0 Eon E = f (RG) , inductive load , Tj = 125C par.: VCE = 600V, VGE = 15 V, IC = 35 A 20 mWs E 16 14 Eon 12 10 8 6 4 2 0 0 Eoff 10 20 30 40 50 60 A IC 80 20 40 60 80 100 120 140 RG 180 Semiconductor Group 7 Mar-28-1996 BSM 35 GB 120 DN2 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 70 A 60 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 Diode K/W IF 55 50 45 40 35 30 25 20 15 10 5 0 0.0 ZthJC 10 -1 Tj=125C Tj=25C D = 0.50 0.20 10 -2 0.10 0.05 single pulse 0.02 0.01 0.5 1.0 1.5 2.0 V 3.0 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 8 Mar-28-1996 BSM 35 GB 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 180 g Semiconductor Group 9 Mar-28-1996 |
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